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We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates.These devices exhibit simultaneously 2.1 GHz and 16.2 dB RF-gain at 21 GHz with a 450 thin-film resistor and a bypass capacitor integrated on a chip.
We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorbent modulators (IQW-EAMs) on n-InP substrates GHz and 16.2 dB RF-gain at 21 GHz with a 450 thin-film resistor and a bypass capacitor integrated on a chip.