X射线光刻相对于其他下一代光刻技术而言有许多优点,比如其工艺宽容度大、成品率高、景深大、曝光视场大、成本低等,更为重要的是,其技术已经比较成熟。对于 100nm 同步辐射 X 射线光刻系统而言,它采用的波长通常为 0.7—1.0nm,而当光刻分辨率达到 50nm 以下时,采用的同步辐射 X 射线波长范围应该为 0.2—0.4 nm。探讨了在北京同步辐射 3B1A 光刻束线上进行 50nm X 射线光刻的可能性。 X-ray lithography has many advantages over other next-generation lithography technologies, such as high process latitude, high yield, large depth of field, large exposure field and low cost. More importantly, the technology has been More mature. For a 100 nm synchrotron X-ray lithography system, the wavelength used is typically 0.7-1.0 nm, and when photolithographic resolution is less than 50 nm, the synchrotron radiation X-ray wavelength range used should be 0.2-0.4 nm. The possibility of 50 nm X-ray lithography on Beijing Synchrotron 3B1A lithography beam was discussed.