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对磁控溅射PZT铁电多层薄膜进行了分析，结果表明：通过对多层薄膜合理的设计和厚度控制，可以改善薄膜的性能，为进一步的器件应用提供了可能性。通过研究发现。制备多层膜较理想的溅射条件是衬底温度Ts＝650℃，薄膜子层厚度约为300um，衬底则以MgO（100）单晶、SiO2（100）单晶为佳。结构分析的结果显示出：PZT多层铁电膜中的晶粒排列整齐，颗粒大小均匀，基本上和衬底成定向织构，膜的电畴呈180°。通过比较可以发现，子层厚度及总厚度超薄，膜的介电常数越大，弛豫频率也越高。但薄膜总厚度对多层膜的绝缘性能影响不大，这说明薄膜的绝缘性质主要是由金属－铁电薄膜的界面决定的。在不同的电压下，多层膜的传导性能影响肖特基势垒的穿透和Fowler－Nordheim隧穿。
The magnetron sputtering PZT ferroelectric multilayer films were analyzed. The results show that the reasonable design and thickness control of the multilayer films can improve the performance of the films and provide the possibility for further device applications. found in study. The optimum sputtering conditions for preparing the multi-layer film are substrate temperature Ts = 650 ° C, film sub-layer thickness of about 300 μm and substrate of MgO (100) single crystal and SiO 2 (100) single crystal. The results of structural analysis show that the grains in the PZT multilayer ferroelectric film are arranged neatly and the particle size is uniform. By comparison, it can be found that the thickness of the sublayer and the total thickness are very thin, the larger the dielectric constant of the film is, the higher the relaxation frequency is. However, the total thickness of the film has little effect on the insulation properties of the multi-layer film, indicating that the insulating properties of the film are mainly determined by the interface of the metal-ferroelectric film. At different voltages, the conductivity of multilayer films affects Schottky barrier penetration and Fowler-Nordheim tunneling.