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一、引言近年来GaAs工艺有了很大的进展,目前已能制造栅长小于1微米的GaAs肖特基势垒场效应晶体管(MESFET)。这种器件的最高振荡频率要比双极晶体管高得多。本文只对中描述的MESFET的特性进行简单的讨论,并对低温下MESFET的噪声特性给予评价。其目的是为了证明,GaAs MESVET非常适合于X和Ku波段的宽带运用。利用测得的器件的散射参数,宽带放大器已用比较简便的互作用计算机程序完成了设计。这种计算表明,用简单的匹配网络可得到具有较大带宽的MESFET放大器。除了此最佳的微波双极晶体管有更好的噪声和增益特性之外,
I. INTRODUCTION In recent years, great progress has been made in GaAs technology. Currently, GaAs Schottky barrier field effect transistors (MESFETs) with a gate length of less than 1 micron have been manufactured. The maximum oscillation frequency of this device is much higher than the bipolar transistor. This article only briefly describes the characteristics of the MESFET described in detail, and evaluates the noise characteristics of the MESFET at low temperatures. The goal is to demonstrate that GaAs MESVET is ideally suited for broadband applications in the X and Ku bands. Using the measured scattering parameters of the device, the wideband amplifier has been designed with a relatively simple interactive computer program. This calculation shows that MESFET amplifiers with larger bandwidths can be obtained with a simple matching network. In addition to this best microwave bipolar transistor has better noise and gain characteristics,