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本文介绍了离子注入技术中双偏角注入,大偏角注入和双向双偏注入等新工艺与使用效果。同时,阐析了BF~+对Si~+注入的沾污,以及以上研究在研制高水平GaAs器件中的关键作用。
This paper introduces the new techniques and effects of double-angled implant, large-angled implant and bi-directional double-side implant in ion implantation. At the same time, the contamination of Si ~ + implanted by BF ~ + and the key role of the above research in the development of high-level GaAs devices are analyzed.