Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm× 30
A high-performance enhancement-mode(E-mode) gallium nitride(Ga N)-based metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT) that employs
Zhang Shuqin is on a mission to help the children that others would rather just forget. Many of China’s prisoners have children, and when these parents go to j