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对GaN基蓝光LED施加ESD冲击,比较LED在受到ESD冲击前后I-V特性曲线、-5 V反向漏电流以及光色电特性的变化发现在I-V特性曲线和-5 V反向漏电流有明显变化的情况下,LED的光色电特性没有明显变化。选择在受到ESD冲击后反向漏电流值为不同数量级的LED作为样品进行加速老化实验,比较样品在加速老化实验前后的I-V特性曲线、光色电特性等参数的变化。通过比较样品之间的光衰减速率,发现反向漏电流大于1 mA时,样品的光衰减明显加快。
An ESD impact was applied to the GaN-based blue LED. The IV characteristic curve, the -5 V reverse leakage current, and the color change of the LED before and after ESD impact were observed. The IV characteristic curve and the -5 V reverse leakage current were significantly changed The case of LED light color electrical characteristics did not change significantly. The LED with different reverse leakage current value after ESD impact was selected as the sample for accelerated aging experiment. The changes of I-V characteristic curve, light color characteristic and other parameters before and after the accelerated aging experiment were compared. By comparing the rate of light decay between the samples, it was found that the light attenuation of the sample was significantly faster when the reverse leakage current was greater than 1 mA.