SPIN-DEPENDENT TUNNELING MAGNETORESISTANCE IN Fe-O/AlOx/Fe-O FILMS

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Fe-O/AlOx/Fe-O tunnel junctions were prepared by reactive magnetron sputteringunder mixed working gas Ar+2%O2. The insulating AlOx layer of 1-2nm thicknesswas sputtered directly from Al2O3 target. Electrode layers were made of 80at.% ironand 20at.% oxygen
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