Numerical investigations of an optical switch based on a silicon stripe waveguide embedded with vana

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A novel scheme for the design of an ultra-compact and high-performance optical switch is proposed and investigated numerically. Based on a standard silicon(Si) photonic stripe waveguide, a section of hyperbolic metamaterials(HMM) consisting of 20-pair alternating vanadium dioxide (VO_2)∕Si thin layers is inserted to realize the switching of fundamental TE mode propagation. Finite-element-method simulation results show that, with the help of an HMM with a size of 400 nm × 220 nm × 200 nm(width × height × length), the ON/OFF switching for fundamental TE mode propagation in an Si waveguide can be characterized by modulation depth(MD) of5.6 d B and insertion loss(IL) of 1.25 dB. It also allows for a relatively wide operating bandwidth of 215 nm maintaining MD > 5 dB and IL < 1.25 dB. Furthermore, we discuss that the tungsten-doped VO_2 layers could be useful for reducing metal-insulator-transition temperature and thus improving switching performance. In general, our findings may provide some useful ideas for optical switch design and application in an on-chip all-optical communication system with a demanding integration level. A novel scheme for the design of an ultra-compact and high-performance optical switch is proposed and investigated numerically. Based on a standard silicon (Si) photonic stripe waveguide, a section of hyperbolic metamaterials (HMM) consisting of 20-pair alternating vanadium (VO_2) / Si thin layers is inserted to realize the switching of fundamental TE mode propagation. Finite-element-method simulation results show that with the help of an HMM with a size of 400 nm × 220 nm × 200 nm (width × height × length), the ON / OFF switching for fundamental TE mode propagation in an Si waveguide can be characterized by modulation depth (MD) of 5.6 d B and insertion loss (IL) of 1.25 dB. It also allows for a Furthermore, we discuss that the tungsten-doped VO_2 layers could be useful for reducing metal-insulator-transition temperature and thus improving switching performance. In general, our findings may prov ide some useful ideas for optical switch design and application in an on-chip all-optical communication system with a demanding integration level.
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