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一、引言 硅膜广泛用于集成电路和传感器中。硅膜厚度及其均匀性对器件性能影响很大,尤其制备SiO_2上的硅膜是实现集成电路三维结构的关键,它将增加器件设计的灵活性。因此,近年来薄膜制备技术的研究十分活跃。以往固态传感器中常用机械研磨和化学腐蚀方法获得微结构,例如:薄膜、埋层和悬板等,但受到硅膜表面状态和机械强度的限制,最薄只能达到10μm以上。本文将综述硅膜的制备方法,简要介绍用电化学腐蚀自停止方法制取(1～2)μm,均匀性为80nm左右硅膜的实验结果及其在传感器中的应用实例。
I. Introduction Silicon film is widely used in integrated circuits and sensors. The thickness and homogeneity of the silicon film have a great influence on the performance of the device. In particular, the preparation of the silicon film on SiO 2 is the key to realizing the three-dimensional structure of the integrated circuit, and it will increase the flexibility of the device design. Therefore, the research of thin film preparation technology is very active in recent years. In the past, solid-state sensors were often used mechanical milling and chemical etching methods to obtain the microstructure, such as: film, buried layer and suspended board, but by the silicon surface state and mechanical strength constraints, the thinnest can only reach more than 10μm. This article reviews the preparation methods of silicon films, briefly introduces the experimental results of using silicon carbide films prepared by self-stopping method with electrochemical corrosion (1 ~ 2) μm and uniformity of about 80nm and its application in sensors.