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寄生振荡的存在使得放大器在信号光到达之前消耗了大量的反转粒子数,降低了放大器的激光增益和储能效率,严重地影响了激光放大器的性能,尤其对高功率激光放大器。在理论分析和实验研究的基础上,以Nd∶YAG晶体板条为例,用8条半导体激光阵列对晶体进行双侧抽运,研究了高功率激光放大器的寄生振荡现象,分析了板条晶体寄生振荡产生的原因,并详细比较了晶体在不同的抽运功率和表面处理下的放大效果,得到了2倍的单程放大,当输入能量为140 mJ时,获得了278 mJ的激光输出。
The existence of parasitic oscillation makes the amplifier consume a large number of inverted particles before the signal light arrives, reducing the laser gain and energy storage efficiency of the amplifier, which seriously affects the performance of the laser amplifier, especially for high power laser amplifiers. On the basis of theoretical analysis and experimental study, taking the Nd: YAG crystal slab as an example, we use 8 semiconductor laser arrays to pump the crystal on both sides, and study the parasitic oscillation phenomenon of the high power laser amplifier. The reason of parasitic oscillation is also discussed. The magnification effect of crystal under different pumping powers and surface treatments is compared in detail. The single-pass amplification of 2 times is obtained. When the input energy is 140 mJ, a laser output of 278 mJ is obtained.