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少数层MoSe_2材料作为一种新型半导体材料,具有较高的光电转换效率。综述了单层或数层MoSe_2二维材料的特性,简述了MoSe_2二维纳米材料的主要制备方法,包括机械剥离法、化学气相沉积(CVD)法和分子束外延(MBE)法。MoSe_2材料可形成直接带隙半导体材料,MoSe_2场效应管应用了MoSe_2材料良好的电学特性,由于MoSe_2材料具有优异的光学特性,因此可用于制作二次谐波器。介绍了MoSe_2二维材料中光二次谐波的产生及相关特性,并列举了MoSe_2二维材料在晶体管、光学探测器方面现有的研究及应用。最后指出,提升制备效率是使MoSe_2材料得到广泛应用的必备条件。
A few layers of MoSe_2 material as a new type of semiconductor material with high photoelectric conversion efficiency. The properties of MoSe_2 two-dimensional materials with single layer or several layers were summarized. The main preparation methods of MoSe_2 two-dimensional nanomaterials were summarized, including mechanical delamination, chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). MoSe_2 material can form direct bandgap semiconductor material, MoSe_2 FET application MoSe_2 material good electrical properties, due to the excellent optical properties of MoSe_2 material, it can be used to make the second harmonic. The generation and related characteristics of optical second harmonic in MoSe_2 two-dimensional materials are introduced. The existing research and applications of MoSe_2 two-dimensional materials in transistors and optical detectors are also presented. Finally, it is pointed out that improving the preparation efficiency is the prerequisite to make the MoSe_2 material widely used.