Turner机理对于化学刻蚀中多孔硅形成的描述中,并未对表面活性数据和纳米结构的形成进行详细解释。通过研究发现氧化物在纳米多孔硅薄膜的形成中并不起重要作用,基于对化学刻蚀和纳米结构形成机理的理解提出了刻蚀溶液选择的七条规则。使用这七条规则尝试了三种新的含有Fe3+,VO2+和Ce4+的刻蚀溶液并证实能有效制备多孔硅。这些溶液可以避免由硝酸盐/亚硝酸盐为基础的刻蚀溶液所造成的问题,其优点包括无需活化、诱导时间缩短以及厚度均一膜的可重复性,因而是化学刻蚀工艺中一个重要的进展。 Turner Mechanism For the description of porous silicon formation in chemical etching, the formation of the surface activity data and nanostructures is not explained in detail. It has been found through studies that oxide does not play an important role in the formation of nanoporous silicon films. Based on the understanding of chemical etching and nanostructure formation mechanism, seven rules for selecting etching solution are proposed. Using these seven rules, three new etching solutions containing Fe3 +, VO2 + and Ce4 + were tried and proved to be effective in preparing porous silicon. These solutions avoid the problems posed by nitrate / nitrite-based etching solutions, which include the advantages of no activation, short induction time, and uniform film thickness repeatability and are therefore important in chemical etching processes progress.