美国IBM公司试制了一种氮化镓发光二极管,结构如下: 1.衬底——无势垒的硅衬底,P型电导。 2.氮化镓层——半绝缘,具有高比电阻(10~7欧姆/厘米),用阴极溅射法镀在硅衬底上,厚500～3000A 3.SiO_2膜——1000～3000(?)厚,开一窗口,窗口形状按需要而定,用腐蚀法做成。 4.透明电极——氮化铟,重掺杂锡。1000～5000(?)厚。 IBM Corporation of the United States trial of a gallium nitride light-emitting diode, the structure is as follows: 1. Substrate - barrier-free silicon substrate, P-type conductivity. 2. GaN layer - semi-insulating, with high specific resistance (10 ~ 7 ohm / cm), by sputtering sputtering on a silicon substrate, 500 ~ 3000A thick 3.SiO2 film - 1000 ~ 3000 ( ?) Thick, open a window, the shape of the window according to need, made with the corrosion method. 4. Transparent electrode - indium nitride, heavily doped tin. 1000 ~ 5000 (?) Thick.