论文部分内容阅读
利用新改进的水平低压热壁CVD设备,改变生长时的压力和H2流速,在50mm的Si(100)和(111)衬底上获得了3C-SiC外延膜,并对外延膜的结构均匀性、电学均匀性和厚度均匀性进行了分析.X射线衍射图中出现了强的3C-SiC的特征峰,其中3C-SiC的(200)和(111)峰的半高宽分别为0·41°和0·21°.3C-SiC外延膜方块电阻的均匀性最好可达2·15%.厚度均匀性可达±5·7%(σ/mean值).
A 3C-SiC epitaxial film was obtained on 50mm Si (100) and (111) substrates with a newly improved horizontal low-pressure hot-wall CVD equipment to change the growth pressure and H2 flow rate. The structure uniformity of the epitaxial films , Electrical uniformity and thickness uniformity were analyzed.The characteristic 3C-SiC peaks appeared in the X-ray diffraction pattern, and the FWHM of the (200) and (111) peaks of 3C-SiC were 0.41 ° and 0 · 21 ° .3C-SiC epitaxial film sheet resistance uniformity of the best up to 2 · 15%. Thickness uniformity of up to ± 5.7% (σ / mean value).