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采用低压气相化学沉积方法在铜基底表面制备了单层石墨烯,微观表征了其单层特性;然后通过电化学分析方法研究了单层石墨烯/铜的耐腐蚀特性,量化分析了其抗腐蚀能力。研究结果表明,单层石墨烯能够有效地抑制铜在电解液中的氧化还原反应而自身不会损坏,但如果石墨烯生长不完整或存在缺陷则相应部位的铜会被腐蚀。石墨烯/铜比裸铜的腐蚀电位提高了20 m V,电流密度降低了近1个数量级,其腐蚀阻抗模值较裸铜提高了1个数量级。研究表明,单层石墨烯能很好地将铜基底与电解液隔离,有效增强了铜的抗腐蚀能力。
Monolayer graphene was prepared on the surface of copper substrate by low-pressure gas-phase chemical deposition, and its monolayer characteristics were characterized microscopically. Then the corrosion resistance of single-layer graphene / copper was studied by electrochemical analysis, ability. The results show that single-layer graphene can effectively restrain the redox reaction of copper in the electrolyte without damaging itself, but if the growth of graphene is incomplete or defective, the copper in the corresponding part will be eroded. The corrosion potential of graphene / copper is increased by 20 mV compared with that of bare copper, the current density is reduced by nearly one order of magnitude, and the corrosion resistance modulus of graphene / copper is increased by one order of magnitude compared with bare copper. Studies have shown that single-layer graphene can well isolate the copper substrate from the electrolyte and effectively enhance the corrosion resistance of copper.