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在氢气区熔硅单晶中观测到一个2688cm~(-1)的新Si-H红外吸收峰.该谱峰不能由文献[2]、[4]提的模型来解释.
A new Si-H infrared absorption peak of 2688cm -1 was observed in the hydrogen-zone single-crystal silicon melt, which can not be explained by the models mentioned in [2] and [4].