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等离子体浸没离子注入（PIII）为解决束线离子注入所难以解决的圆筒状零件内表面注入处理问题提供了新的可能途径，但在应用中却受到注入能量和注入剂量偏低的限制．本文针对这一问题提出了偏转电场法用以提高内表面注入的能量和注入剂量．实验结来表明，采用这一方法可以有效地改善圆筒状零件内表面注入的注入情况．注入峰值深度提高了25％～100％，注入剂量提高了73％～113％．注入脉冲宽度的延长有利于注入离子向筒内部深入，利于筒深处注入效果的改善．
Plasma immersion ion implantation (PIII) provides a new possible solution to the problem of injection treatment on the inner surface of cylindrical parts which is difficult to solve by beam line ion implantation, but it is limited in application due to the low injection energy and injection dose. In view of this problem, this paper proposes a deflection electric field method to increase the energy injected into the inner surface and the implantation dose. Experimental results show that the use of this method can effectively improve the injection of the inner surface of the cylindrical part of the injection situation. Injection peak depth increased by 25% to 100%, the injection dose increased by 73% to 113%. Implantation pulse width extension is conducive to the ion implantation into the cylinder depth, which will help to improve the injection depth of the cylinder.