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文章介绍了抗单粒子翻转容错处理器NBHARK的结构与实现,采用了改进的优化奇权重列编码方法纠检寄存器文件的瞬时错误。提出了多种有效方法提高整个处理器可靠性,如三模冗余内部临时寄存器,三模冗余时钟,片上EDAC,奇偶校验,强制cache缺失等。该芯片在smic0.18μmCMOS工艺投片。辐射试验表明,粒子注入(>50,000)引起的单粒子翻转错误均成功纠正。试验采用252Cf辐射源,3.5uCi,以及43MeV.cm2/mg平均LET进行。
This paper introduces the structure and implementation of anti-single-event rollover fault tolerant processor NBHARK, and adopts the improved odd-odd-odd-rank coding method to correct the transient error of the register file. A variety of effective methods are proposed to improve the reliability of the whole processor, such as three-mode redundant internal temporary registers, three-mode redundant clocks, on-chip EDAC, parity checking, forced cache miss, The chip in the smic0.18μmCMOS process film. Radiation tests showed that single-particle inversion errors caused by particle implantation (> 50,000) were successfully corrected. The experiments were conducted using a 252 Cf radiation source, 3.5 uCi, and an average LET of 43 MeV.cm2 / mg.