Heredity of high pure aluminum melts under different pulse electric field was investigated by means of repetitious remelt experiment. The results indicate that the genetic coefficient by measurement of grain size of cast structure has a close relation with pulse voltage. Moreover, the hereditary law accords with the function of In=1+e-αn+β. The stability of genetic carrier (cluster) comprises in the competition between repetitious cooling and heating impulse and the effect of electric pulse modification. Heredity of high pure aluminum melts under different pulse electric field was investigated by means of repetitious remelt experiment. The results that that genetic coefficient by measurement of grain size of cast structure has a close relationship with pulse voltage. Moreover, the hereditary law accords with the function of In = 1 + e-αn + β. The stability of genetic carrier (cluster) comprises in the competition between repetitious cooling and heating impulse and the effect of electric pulse modification.