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用溶胶凝胶法制备纯CaCu3Ti4O12(CCTO)薄膜以及NiO掺杂CaCu3-x Nix Ti4O12(CCNTO)薄膜(x=0.10、0.20、0.30),研究了掺杂NiO对CCTO介电性能以及微观结构的影响。通过AFM图片可以看出,掺杂NiO的CCTO薄膜的晶粒尺寸比不掺杂NiO的CCTO薄膜的晶粒尺寸小。当x=0.2时,CCNTO薄膜的漏电流最小,最小值为0.546 mA,同时具有最大阈值电压与最大非线性系数,最大值分别为81 V/mm和1.9。当Ni掺杂量达到一定程度时,CCNTO薄膜的介电常数就会增加,总体来说,随着Ni的掺杂量增加,CCNTO薄膜的介电损耗呈上升趋势。
The pure CaCu3Ti4O12 (CCTO) thin films and the NiO doped CaCu3-xNixTi4O12 (CCNTO) thin films (x = 0.10, 0.20 and 0.30) were prepared by sol-gel method and the effects of NiO doping on the dielectric properties and microstructure of CCTO . It can be seen from the AFM picture that the crystallite size of the NiO-doped CCTO film is smaller than that of the non-NiO-doped CCTO film. When x = 0.2, the leakage current of CCNTO film is the smallest, with a minimum value of 0.546 mA, with the maximum threshold voltage and the maximum nonlinearity coefficient, the maximum being 81 V / mm and 1.9, respectively. The dielectric constant of CCNTO thin film increases with the Ni doping content. In general, the dielectric loss of CCNTO thin film increases with increasing Ni doping content.