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在集成电路芯片制造中,激光被广泛应用于缺陷扫描或者相关的光学量测工具中。未见报道低功率的缺陷扫描时,输出功率仅数百毫瓦且扫描速度很快时,会对熔点达1420℃上的硅芯片造成影响,在制造中以Compass为代表的缺陷扫描工具被广泛而无顾虑地应用在芯片制造中。然而通过在动态储存器制造中的一个低良率事件,介绍了缺陷扫描及动态储存器的基本原理,并指出在378mW输出功率时,缺陷扫描能将电容表面硅重熔,导致电容结构被破坏。通过试验、计算指出输出功率≤100mW是安全使用功率,为芯片制造业界提供了关于表面材料为硅、氧化硅、氮化硅使用指南,避免了因Compass为代表的缺陷扫描工具广泛应用带来的额外损伤,并为以后的芯片激光快速热处理研究提供了损伤研究依据。
In the manufacture of integrated circuit chips, lasers are widely used in defect scanning or related optical measurement tools. No reported low-power defect scanning, the output power of only a few hundred milliwatts and the scanning speed is very fast, the melting point of up to 1420 ℃ on the silicon chip impact in the manufacture of Compass as the representative of the defect scanning tools are widely Without concern for the chip manufacturing. However, the basic principles of defect scanning and dynamic memory are introduced through a low-yield event in dynamic memory fabrication. It is pointed out that at 378mW output power, defect scanning can remelt the silicon on the capacitor surface, resulting in the destruction of the capacitor structure . Through experiments, it is calculated that the output power ≤100mW is the safe use of power, which provides the chip manufacturing industry with guidance on the use of silicon, silicon oxide and silicon nitride as the surface material, and avoids the widespread application of defect scanning tools represented by Compass Additional damage, and provides the basis for the damage research for the rapid research of laser chip heat treatment in the future.