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提出了体硅LDMOS漂移区杂质浓度分布的一种二维理论模型,根据该模型,如果要使带有场极板的LD MOS得到最佳的性能,那么LDMOS漂移区的杂质浓度必须呈分段线性分布.用半导体专业软件Tsuprem4和Medici模拟证明了该模型十分有效,根据该模型优化得到的新型LDMOS的击穿电压和导通电阻分别比常规LD MOS增加58.8%和降低87.4%.
A two-dimensional theoretical model of the impurity concentration distribution in the bulk silicon LDMOS drift region is proposed. According to this model, if the LD MOS with field plate is to obtain the best performance, the impurity concentration of the LDMOS drift region must be segmented Linear distribution. The semiconductor specialty software Tsuprem4 and Medici simulation proved that the model is very effective. The breakdown voltage and on-resistance of the new LDMOS optimized by this model are respectively 58.8% and 87.4% lower than the conventional LD MOS.