论文部分内容阅读
InGaAs/AlGaAs MQW superluminescent LED (SLED) is fabricated by using pulsed anodic oxidation and molecular beam epitaxy (MBE). The power and spectral output characteristics of three kinds of device structures are investigated. An output power above 10mW with FWHM of 18nm is demonstrated at a current of 150mA.