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利用金属有机物化学气相沉积技术在蓝宝石衬底表面制备了带有p-AlGaN电子阻挡层的400 nm高性能紫光InGaN多量子阱发光二极管。制作了3种紫光LED,分别带有不同p-AlGaN电子阻挡层结构:Al摩尔分数为9%的p-AlGaN电子阻挡层;Al摩尔分数为11%的p-AlGaN电子阻挡层;Al摩尔分数为20%的10对p-AlGaN/GaN超晶格电子阻挡层。带有高浓度Al电子阻挡层的紫光LED的光输出功率高于低浓度Al电子阻挡层的紫光LED。带有10对p-AlGaN/GaN超晶格电子阻挡层的紫光LED的光输出功率获得了极大的提高,在20 mA注入电流时测试得到的光输出功率为21 mW。此外,该LED同时显示了在高注入电流下接近线性的I-L特性曲线和在LED芯片表面均匀的发光强度分布。
A 400 nm high performance InGaN MQW LED with p-AlGaN electron blocking layer was prepared on the surface of sapphire substrate by metalorganic chemical vapor deposition. Three types of violet LEDs were fabricated with different p-AlGaN electron blocking layer structures: a p-AlGaN electron blocking layer with an Al mole fraction of 9%; a p-AlGaN electron blocking layer with an Al mole fraction of 11%; Al mole fractions 20 pairs of 10 pairs of p-AlGaN / GaN superlattice electron blocking layer. A violet LED with a high concentration of Al electron blocking layer has a higher light output than a violet LED with a low concentration of Al electron blocking layer. The light output power of a violet LED with 10 pairs of p-AlGaN / GaN superlattice electron blocking layers has been greatly improved, with an optical output power of 21 mW measured at 20 mA injection current. In addition, the LED shows both near-linear I-L characteristics at high injection currents and uniform luminous intensity distribution on the LED chip surface.