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用一种新型磁控溅射气体凝聚团簇源产生Cu_n~-(n是簇原子个数)团簇束,当团簇束分别在偏压V_α为0,1,3,5,10kV的电场中加速后,在真空中,沉积在室温下的P-si(111)衬底上,获得Cu/P-Si(111)薄膜样品。用AFM分析表明:当V_α(?)3kV时,团簇束成膜,膜表面的粗糙度比常规磁控溅射小,且随V_α增加,粗糙度减小。用四探针测薄膜方块电阻,经归一化后可知:团簇束沉积,当V_α(?)3kV时,薄膜方块电阻大于常规磁控溅射的方块电阻,当V_α(?)5kV时薄膜方块电阻已小于常规磁控溅射方块电阻;对于团簇束沉积,薄膜方块电阻随沉积偏压V_α的增加而减小。
A new type of magnetron sputtering gas was used to cluster cluster sources to generate Cu_n ~ (n is the number of cluster atoms) clusters. When the clusters were in an electric field with V_α of 0, 1, 3, 5 and 10 kV After being accelerated, a Cu / P-Si (111) thin film sample was obtained by depositing it on a P-Si (111) substrate at room temperature in a vacuum. AFM analysis showed that when the V_α (?) 3kV, the cluster beam deposition, the film surface roughness than the conventional magnetron sputtering, and with increasing V_α, the roughness decreases. The square resistance of the thin film is measured by the normalized magnetron sputtering method. The square resistance of the thin film is larger than that of the conventional magnetron sputtering at V_α (?) Of 3kV. When the V_α The sheet resistance has been less than that of a conventional magnetron sputtered sheet resistor; for cluster beam deposition, the sheet resistance decreases with increasing deposition bias V_α.