通过阳极氧化电化学方法制备了多孔硅 ,并在室温下对不同条件下制得的多孔硅光致发光谱 (PL谱 )进行系统的分析 .结果表明 ,随着阳极电流密度、阳极化溶液浓度和时间的增大 ,多孔硅的 PL谱峰将发生“蓝移”,并且 PL峰强也显著增加 ,但过大的电流密度、阳极化溶液浓度和时间将导致 PL峰强下降 .另外 ,还发现 PL谱存在多峰结构 ,而多孔硅在空气中放置时间的延长将引起其 PL的短波峰“蓝移”和强度下降 ,但对长波峰只引起强度减弱 ,并不影响其峰位 .PL谱的多峰结构可以认为是由于样品中同时存在“树枝”状和“海绵”状两种微观结构所产生的 ,在这个假设下 ,用多孔硅氧化后发光中心从硅表面移到二氧化硅层及量子限制模型能够解释上述现象 Porous silicon was prepared by anodization electrochemical method, and the PL spectra of porous silicon prepared under different conditions were systematically analyzed at room temperature.The results showed that with the anode current density, the concentration of anodizing solution With the increase of time, PL peak of porous silicon will be “blue-shifted” and PL peak intensity will increase significantly, too large current density, concentration and time of anodizing solution will lead to decrease of PL peak intensity. It is found that there is a multimodal structure in the PL spectrum, while the prolongation of the porous silicon in air for a short time will cause the “blue shift” and the decrease of the intensity of the short wave peak of PL, but only the decrease of the intensity due to the long wave peak. The multimodal structure of the spectrum is believed to be due to the simultaneous presence of both “dendritic” and “sponge” microstructures in the sample. Under this assumption, the luminescent center after the oxidation with porous silicon migrates from the silicon surface to the silicon dioxide Layer and quantum confinement models can explain the above phenomenon