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据讯,最近,IEEE电子器件会议上有人发表文章认为电子束技术在制备高分辨率、高密度和高速大规模集成电路方面比光刻技术优越。离子束掺杂工艺的控制比扩散工艺容易得多。电子束可以聚焦成非常小的点,大约5～100埃。在光刻工艺中,点的大小一直排回在5000埃的数量级内。因此,电子束能制作更复杂更致密的图案,制作的条宽小于0.2微米,以期形成高速电路。此外,电子束的开启或关断比较方便,还可根据需要予以取
It is reported that recently, it was reported at the IEEE Electronic Devices Conference that electron beam technology is superior to lithography in the fabrication of high-resolution, high-density and high-speed large-scale integrated circuits. Ion beam doping process control much easier than the diffusion process. The electron beam can be focused into very small spots, about 5 to 100 angstroms. In photolithography, the size of the dots is always in the order of 5000 angstrom. Therefore, the electron beam can make a more complex and dense pattern with a width of less than 0.2 micrometers in order to form a high-speed circuit. In addition, the electron beam on or off more convenient, but also can be taken as needed