对基于斜台面工艺的背照式pin型GaN紫外雪崩探测器制备进行了简要介绍。通过斜台面制作工艺的对比优化研究,完成了GaN紫外雪崩探测器的低损伤斜台面制作,器件测试结果表明,高质量斜台面能够有效抑制雪崩探测器的表面提前击穿,器件暗电流特性优良,获得了超高雪崩增益的GaN紫外雪崩探测器。 The back-illuminated pin-type GaN ultraviolet avalanche detector based on the slant bench process is briefly introduced. Through the comparison and optimization research of the production process of the inclined tabletop, the low damage inclined tabletop of the GaN avalanche detector has been fabricated. The test results show that the high-quality inclined tabletop can effectively suppress the surface breakdown of the avalanche detector and the dark current characteristics of the device are excellent , Obtained avalanche gain GaN avalanche detector.