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采用对靶磁控反应溅射技术,以氢气作为反应气体在不同的氢稀释比条件下制备了氢化非晶硅薄膜.利用台阶仪、傅里叶红外透射光谱、Raman谱和紫外-可见光透射谱测量研究了不同氢稀释比对氢化非晶硅薄膜生长速率和结构特性的影响.分析结果发现,利用对靶磁控溅射技术能够实现低温快速沉积高质量氢化非晶硅薄膜的制备.随着氢稀释比不断增加,薄膜沉积速率呈现先减小后增大的趋势.傅里叶红外透射光谱表明,氢化非晶硅薄膜中氢含量先增大后变小.而Raman谱和紫外-可见光透射谱分析发现,氢稀释比的增加使氢化非晶硅薄膜有序度和光学带隙均先增大后减小.可见,此技术通过改变氢稀释比R能够实现氢化非晶硅薄膜结构的有效控制.
Hydrogenated amorphous silicon thin films were prepared by magnetron reactive sputtering with hydrogen gas as reactant gas at different hydrogen dilution ratios. The surface morphology of the films were characterized by means of step-meter, Fourier transform infrared spectroscopy, Raman spectroscopy and UV-Vis transmission spectroscopy The effects of different hydrogen dilution ratios on the growth rate and structural characteristics of hydrogenated amorphous silicon thin films were investigated. The results show that the high-quality hydrogenated amorphous silicon thin films can be rapidly deposited at low temperature by using target magnetron sputtering The hydrogen deposition rate increases and the deposition rate of the films first decreases and then increases.The Fourier transform infrared spectroscopy shows that the hydrogen content in hydrogenated amorphous silicon films firstly increases and then decreases.The Raman spectra and UV- The spectral analysis shows that the order of hydrogenated amorphous silicon films and the optical bandgap first increase and then decrease with the increase of hydrogen dilution ratio.It can be seen that the hydrogenated amorphous silicon thin film structure can be effectively modified by changing the hydrogen dilution ratio R control.