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采用RF磁控溅射法在载玻片上制备了可用于电极材料的掺Al氧化锌(AZO)透明导电薄膜,并对不同衬底温度和溅射功率下制备的AZO薄膜结构、光电性能进行了表征分析.结果表明:各种工艺条件下沉积的AZO薄膜均具有明显的(002)择优取向,没有改变ZnO六方纤锌矿结构;薄膜电阻率随衬底温度升高而减小,随溅射功率增加先减小后增大,衬底温度400℃、溅射功率200W时最小,为1.53×10-5Ω.m;可见光平均透射率均在80%以上,光学带隙与载流子浓度变化趋势一致,最大值为3.52eV.
Al 2 O 3 doped AZO films were prepared on glass slides by RF magnetron sputtering. The AZO films were prepared at different substrate temperatures and sputtering powers. The results show that the deposited AZO thin films have obvious (002) preferential orientation and do not change the structure of ZnO hexagonal wurtzite structure. The film resistivity decreases with the increase of the substrate temperature. With the sputtering The power increase decreases first and then increases, the minimum is 1.53 × 10-5Ω.m when the substrate temperature is 400 ℃ and the sputtering power is 200W; the average visible light transmittance is more than 80%; the optical band gap and the carrier concentration change The trend is consistent with a maximum of 3.52eV.