【摘 要】
：
In this paper,InGaAs p-i-n photodetectors (PDs) on an InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI sub
【机 构】
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State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and I
【出 处】
：
中国科学：物理学 力学 天文学（英文版）
论文部分内容阅读
In this paper,InGaAs p-i-n photodetectors (PDs) on an InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate.The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate.The photo responsivities of both devices measured at 1.55 μm are comparable,which are about 0.808-0.828 A W-1.Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are comparable.In general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the high-quality Si-based InP platform for the full photonic integration on a Si substrate.
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