用载流子连续方程研究了一个侧面设置高复合区的双注入P~+πN~+器件的压磁电效应,给出了伏安特性与压力和磁场强度的函数关系.结果表明,当四个P~+πN~+器件在“基区”两两垂直组成惠斯登电桥,制造在C型硅杯的硅膜片上,不但具有较高的压力灵敏度和磁灵敏度,而且可以用来测量磁场的旋转角度.据此,提出了一种新的具有良好工作稳定性及较高灵敏度的压/磁敏感器件. The piezoelectric effect of a double implanted P ~ + πN ~ + device with a high recombination area on the side was studied by the carrier continuity equation and the relationship between volt-ampere characteristics and pressure and magnetic field strength was given. P ~ + πN ~ + devices in the “base” two by two perpendicular to the Wheatstone bridge, made in the C silicon cup silicon diaphragm, not only has high pressure sensitivity and magnetic sensitivity, and can be used to Measuring the rotation angle of magnetic field.Accordingly, a new pressure / magnetic sensitive device with good working stability and high sensitivity is proposed.