一、引言近年来,在GaP,InP,化合物半导体光电器件的制备过程中,闭管扩散有其极大的优越性。(1) 能防止InP,GaP,在扩散温度下大量分解。(2) 可避免外延表面被破坏。(3) 重复性好结深易控制,对获得良好的P—N结有很重要的作用。为了配合InP光电器件的研制,提供优良的扩Zn源材料,我们进行了合成ZnP_2晶体制备试验,合成工艺水平布里奇曼法,对合成的晶体进行了X-射线衍射相分析,证实了ZnP_2晶锭均 I. INTRODUCTION In recent years, in the preparation of GaP, InP, compound semiconductor optoelectronic devices, closed-cell diffusion has its great superiority. (1) To prevent InP, GaP, a large number of decomposition in the diffusion temperature. (2) to avoid the destruction of the epitaxial surface. (3) Good repeatability and easy control of the junction, to obtain a good P-N junction has a very important role. In order to cooperate with the development of InP optoelectronic devices and provide excellent Zn-doped source materials, we carried out the preparation of ZnP 2 crystals and the Bridgman process at the synthesis level. The X-ray diffraction analysis of the synthesized crystals confirmed that ZnP 2 Ingot are