近年来,在光电集成电路(OEIC)及高速电子集成电路的微加工中,对GaAs及有关的Ⅲ—Ⅴ族化合物半导休的干法蚀刻已进行了广泛的研究。因为蚀刻区域要求具有光学或电子学的功能,就需要一种能精确地控制蚀刻速率和蚀刻断面形状的无损伤和无污染的镜面光滑的蚀刻工艺技术。这个方法特别针对OEIC微加工和表面清洁处理的目标,解决激光二极管的微型化和集成化,进行密封清洗的蚀刻处理,并“实地”地进行金属化和纯化处理。本文报导了GaAs和AlGaAs反应离子蚀刻(RIBE)和原子团束清洗(RIC)的主要实验结果及蚀刻引入的损伤 In recent years, dry etching of GaAs and related Group III-V compound semiconductors has been extensively studied in micro-fabrication of optoelectronic integrated circuits (OEICs) and high-speed electronic integrated circuits. Because of the optical or electronic functionality required for the etched areas, there is a need for an undamaged and non-polluting, mirror-smooth etch process that accurately controls the etch rate and the shape of the etched section. Specifically targeted at OEIC micromachining and surface cleaning processes, this method addresses the miniaturization and integration of laser diodes, etching for seal cleaning, and metallization and purification “on the ground.” This paper reports the main experimental results of GaAs and AlGaAs reactive ion etching (RIBE) and atomic group beam cleaning (RIC) and the damage induced by etching