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本文叙述了用于制作1.3μm波长InGaAsP/InP双沟平面隐埋异质结(DC—PBH)激光器的液相外延生长方法,着重讨论了在非平面结构上进行液相外延生长时所遇到的问题及解决措施。采用阳极氧化处理,用InP、Sn合金熔液盖片保护衬底,减少衬底在加热过程申的热损伤等方法获得了高质量的外延片。用该外延片制作的1.3μm波长InGaAsP/InP(DC—PBH)激光器室温连续工作阈值电流最低达9mA,管芯单面输出功率最高达40mW,最高连续激射温度达115℃。
This paper describes the liquid-phase epitaxial growth method used to fabricate a 1.3-μm-wavelength InGaAsP / InP double-trench planar buried heterojunction (DC-PBH) lasers, focusing on the liquid-phase epitaxial growth encountered on nonplanar structures Problems and solutions. Anodization is used to obtain high quality epitaxial wafers by protecting the substrate with InP, Sn alloy melt coverings and reducing thermal damage of the substrate during heating. The 1.3μm-wavelength InGaAsP / InP (DC-PBH) lasers manufactured by this epitaxial wafer have the lowest continuous threshold current of 9mA at room temperature, the output power of single-sided die is up to 40mW and the maximum continuous lasing temperature is 115 ℃.