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对离子注入分布杂质浓度模拟的不同模型进行了简短的回顾,介绍了在Suprem Ⅳ中采用的双Pearson 分布模型。通过对B+ 及As+ 在不同剂量和能量下对硅中的注入,采用SIMS进行浓度分布测试,对双Pearson 模型作了评估
A brief review of different models of ion implanted impurity concentration simulation is presented. The dual Pearson distribution model used in Suprem IV is introduced. The double Pearson model was evaluated by injecting B + and As + into silicon at different doses and energies using the SIMS concentration distribution test