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用解析的方法模拟了T＝300K和77K时，fT和fmax与集电极电流密度Jc的关系，在大电流下考虑了异质结势垒效应的影响。模拟结果和用数值方法以及实验所得到的结果一致。同时，还建立了与之相应的Si／SiGeeb异质结和SiGe／Sibc异质结电容模型。
The relationship between fT and fmax and the collector current density Jc was simulated by analytical method at T = 300K and 77K, and the effect of heterojunction barrier effect was considered under high current. The simulation results are consistent with the numerical results and experimental results. Meanwhile, corresponding Si / SiGeeb heterojunction and SiGe / Sibc heterojunction capacitance model have also been established.