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采用KrF准分子激光直写刻蚀技术在聚偏氟乙烯(PVDF)材料表面引入刻蚀缺陷,利用刻蚀点缺陷和线缺陷的活性中心作用实现了聚偏氟乙烯表面导电层的快速制备。实验结果表明,通过激光刻蚀在该材料表面产生的刻蚀点或刻蚀线均可起到活性中心的作用,轻易地控制导电层的形成,降低了激光改性阈值,低阈值实现了导电层快速制备的目的。通过激光扫描共聚焦显微镜(LSCM)及扫描电镜(SEM)观察,刻蚀缺陷边缘产生类导电层的二维规整网络微结构,为导电层的初期形式。激光刻蚀过程中的激光热交联反应及激光辐照交联反应的交替作用是聚偏氟乙烯导电层快速产生并大面积形成的主要原因。
KrF excimer laser direct writing etching technology was used to introduce etching defects on the surface of polyvinylidene fluoride (PVDF) material, and the surface conductive layer of polyvinylidene fluoride (PVDF) was quickly prepared by utilizing the active center of etching point defects and line defects. The experimental results show that the etching points or etched lines formed on the surface of the material by laser etching can all play the role of active center, easily control the formation of the conductive layer, reduce the laser modification threshold, and the low threshold achieves the conductive The purpose of rapid preparation of layers. By LSCM and SEM, the two-dimensional regular network microstructure of the conductive layer was etched to form the initial layer of the conductive layer. The laser cross-linking reaction and laser irradiation cross-linking reaction in the laser etching process are the main reasons for the rapid formation of polyvinylidene fluoride conductive layer and large area formation.