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采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备n-i-p型非晶硅(a-Si)太阳电池,采用反应热蒸发法制备ITO薄膜作为太阳电池的前电极。通过改变B2H6的掺杂浓度获得了不同晶化率的p层,详细研究了p层性能对p/ITO界面特性以及电池性能的影响。结果表明,在合适晶化率的p层上沉积ITO薄膜有利于优化p/ITO界面的接触特性,将其应用于n-i-p型a-Si太阳电池,能够显著改善电池的开路电压(Voc)和填充因子(FF),最终,在不锈钢(SS)衬底上获得了转换效率为6.57%的单结a-Si太阳电池。
The n-i-p amorphous silicon (a-Si) solar cells were prepared by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). ITO films were prepared by reactive thermal evaporation as the front electrode of solar cells. By changing the doping concentration of B2H6, the p-layer with different crystallization rates was obtained. The influence of p-layer properties on the p / ITO interface characteristics and the cell performance was studied in detail. The results show that depositing ITO thin film on the p-layer with the proper crystallization rate is favorable for optimizing the contact characteristics of the p / ITO interface. When applied to nip type a-Si solar cells, the open circuit voltage (Voc) and filling Factor (FF). Finally, a single-junction a-Si solar cell with a conversion efficiency of 6.57% was obtained on a stainless steel (SS) substrate.