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This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes(LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34%for a thin GaP window layer,and by 17%for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25%and 13%,respectively.
This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes (LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma. Light-power measurements indicate that the scattering of photons regulate enhances the probability of escaping from the nanorod The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer, and by 17% for an 8 μm GaP window layer. The light-power of the nanorod LED is increased by 25% and 13% respectively.