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研究了氧掺杂Ge Sb Te磁控溅射相变薄膜在 4 0 0～ 80 0nm区域的光学常数 (n ,k) ,发现不同氧成分薄膜的光学性质有较大差别 ,经过热处理后薄膜的光学性质也发生了较大变化。由热处理前后薄膜的X射线衍射 (XRD)发现 ,经过退火处理后薄膜发生了从非晶态到晶态的相变。由薄膜内应力变化和薄膜的结构变化解释了薄膜光学性质的变化
The optical constants (n, k) of Ge-doped Sb-doped Mg Sb Te films were investigated in the region of 400 ~ 800 nm. The optical properties of films with different oxygen compositions were found to be different. After heat treatment, Optical properties have also undergone major changes. The X-ray diffraction (XRD) results of the films before and after heat treatment show that the phase transition from amorphous state to crystalline state occurs after annealing. The change of the optical properties of the film is explained by the change of the stress in the film and the change of the structure of the film