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就反应式脉冲激光溅射淀积制备氮化铝（ＡｌＮ）薄膜的过程，讨论了激光脉冲能量密度及脉冲频率对所制备薄膜结构性能的影响，并对薄膜的化学稳定性作了比较详细的研究。结果表明，当薄膜中存在有未反应的单质铝时，薄膜的化学稳定性极差。比较而言，具有高取向性，择优生长的致密ＡＩＮ微晶膜的化学稳定性优于结构相对疏松的非晶膜。实验测试得到，在７５℃，８５％的Ｈ３ＰＯ４溶液和２０℃，０５Ｍ的ＮａＯＨ溶液中，ＡｌＮ微晶膜的溶解速度分别为２６５ｎｍ·ｍｉｎ－１和１４６ｎｍ·ｍｉｎ－１，激活能为２３２ＫＪ·ｍｏｌ－１和３６３ＫＪ·ｍｏｌ－１；在同样条件ＡｌＮ非晶膜的溶解速率分别为５５２ｎｍ·ｍｉｎ－１和３０６ｎｍ·ｍｉｎ－１，ＡｌＮ非晶膜在Ｈ３ＰＯ４中的激活能为１８４ＫＪ·ｍｏｌ－１。
The influence of laser pulse energy density and pulse frequency on the properties of the films prepared by reactive pulsed laser deposition of AlN thin films was discussed. The chemical stability of thin films was also studied in detail the study. The results show that when there is unreacted aluminum in the film, the chemical stability of the film is poor. In comparison, the dense AIN microcrystalline films with high orientation and preferred growth have better chemical stability than the amorphous films with relatively loose structures. The experimental results showed that the dissolution rates of AlN microcrystalline films were 265nm · min-1 and 146nm · min-1 respectively at 85 ℃ in 85% H3PO4 solution and 20 ℃ in 0.5M NaOH solution at 75 ℃, The activation energy was 232KJ · mol-1 and 363KJ · mol-1, respectively. The dissolution rates of AlN amorphous films were 552nm · min-1 and 306nm · min-1, respectively. The activation energy of the membrane in H3PO4 was 18.4KJ · mol -1.