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基于SiGeHBT(异质结双极晶体管)的物理模型,建立了描述SiGeHBT的大信号等效电路模型.该等效电路模型考虑了准饱和效应和自热效应等,模型分为本征和非本征两部分,物理意义清晰,拓扑结构相对简单.该模型嵌入了PSPICE软件的DEVEO(器件方程开发包)中.在PSPICE软件资源的支持下,利用该模型对SiGeHBT器件进行了交直流特性模拟分析,模拟结果与理论分析结果相一致,并且与文献报道的结果符合较好.
Based on the physical model of SiGeHBT (Heterojunction Bipolar Transistor), a large-signal equivalent circuit model for describing SiGeHBT is established. The equivalent circuit model considers the quasi-saturation effect and the self-heating effect. The model is divided into intrinsic and extrinsic The two parts have a clear physical meaning and a relatively simple topological structure. The model is embedded in DEVEO (Device Equations Development Kit) of PSPICE software. With the support of PSPICE software, the model is used to simulate the AC-DC characteristics of SiGeHBT devices. The simulation results are in good agreement with the theoretical analysis and are in good agreement with the results reported in the literature.