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以p型<111>硅片为衬底,经过旋涂固化制备低介电常数(低k)材料聚酰亚胺。经过化学机械抛光(CMP)过程,考察实验前后低k材料介电性能的变化。实验中分别使用阻挡层抛光液、Cu抛光液以及新型抛光液对低k材料进行抛光后,利用电参数仪对低k材料进行电性能测试。结果显示,低k材料介电常数经pH值为7.09新型抛光液抛光后,k值由2.8变为2.895,漏电流在3.35 pA以下,去除速率为59 nm/min。经新型抛光液抛光后的低k材料,在电学性能等方面均优于阻挡层抛光液和Cu抛光液,抛光后的低k材料的性能能够满足应用要求。
A p-type <111> silicon wafer was used as the substrate, and a polyimide with a low dielectric constant (low-k) material was prepared by spin coating. After chemical mechanical polishing (CMP) process, examine the dielectric properties of low-k material before and after the experiment changes. In the experiments, the low-k materials were polished by using the barrier layer polishing solution, Cu polishing solution and new polishing solution respectively, and the electrical properties of the low-k materials were tested by electrical parameter meter. The results show that the dielectric constant of low-k material is changed from 2.8 to 2.895 after polishing at pH 7.09. The leakage current is below 3.35 pA and the removal rate is 59 nm / min. The low-k material polished by the new polishing solution is superior to the barrier polishing solution and the Cu polishing solution in terms of electrical properties and the performance of the polished low-k material can meet the application requirements.