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针对抗辐照设计中特殊非规则条栅栅结构的CMOS/SOI器件,分析其SPICE模型参数,对源漏电阻、电容、体接触电阻等其他模型参数作出调整,建立非标准器件的完整精确模型。设计制作了多种不同非标准栅结构的PD CMOS/SOI晶体管,并采用新的SPICE模型参数来模拟这些器件。模拟数据和试验数据具有很好的一致性,证明所建立的模型具有较高精度,适合抗辐照电路设计应用。
Aiming at the CMOS / SOI devices with special irregular grid structure in the anti-radiation design, the SPICE model parameters are analyzed and the parameters of other models such as the source-drain resistance, the capacitance and the body contact resistance are adjusted, and a complete and accurate model of the non-standard device is established . A variety of PD CMOS / SOI transistors with different non-standard gate structures have been designed and fabricated, and the new SPICE model parameters are used to simulate these devices. Simulation data and test data have good consistency, which proves that the established model has higher accuracy and is suitable for anti-radiation circuit design and application.