在热中子与快中子成份比大于７０的条件下，用６．５×１０１６ｃｍ－２和６．５×１０１８ｃｍ－２剂量水平辐照纯净ＧａＡｓ样品，研究由于嬗变产生的杂质和损伤。所得结果表明：热中子对Ｇａ、Ａｓ发生俘获核反应，其最终稳定产物Ｇｅ作为两性杂质元素被导入；复杂的移位缺陷形成及其热行为是影响辐照后ＧａＡｓ电学性质变化的重要因素。 The pure GaAs samples were irradiated with 6.5 × 10 16 cm -2 and 6.5 × 10 18 cm -2 dose levels to investigate impurities and damage due to transmutation at a ratio of thermal neutrons to fast neutrons greater than 70. The results show that thermal neutron has a nuclear reaction with Ga and As, and the final stabilized product, Ge, is introduced as an amphipathic impurity element. The formation of complex displacement defects and its thermal behavior are important factors that affect the change of electrical properties of GaAs after irradiation.