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在一月份举行的日本电子通信学会半导体、晶体管研究会上,日本电气中央研究所发表了微波GaAsMESFET的研究结果.功率器件在6千兆赫下输出达25瓦,增益3分贝;低噪声器件在4千兆赫下噪声系数为0.7分贝,在12千兆赫下为1.68分贝.该所用内部连接的器件已实现了在6千兆赫下输出15瓦,为进一步提高输出功率,由提高集成度、增加FET的单位栅宽,即栅条长度而获得成功.为设计在10伏偏压下输
At a seminar on semiconductors and transistors held by the Japan Electronics and Communications Research Society in January, NEC released the study of microwave GaAsMESFETs, which output 25 watts at 6 GHz with a gain of 3 dB and low noise devices at 4 The noise figure at gigahertz is 0.7 dB and is 1.68 dB at 12 GHz.The internal connected device has achieved an output of 15 watts at 6 GHz, to further increase the output power by increasing the integration, increasing the FET The unit gate width, which is the length of the gate, is a success, designed for a 10-V bias