通过不同感应耦合等离子体刻蚀条件下进行的玻璃基板发生光刻胶变性的位置,研究光刻胶变性与下部电极结构的相关性。研究结果表明:下部电极的Dam区对玻璃基板的冷却效果较差,导致该区域的玻璃基板上光刻胶容易产生变性。经过对下部电极Dam区的改造可以有效增大玻璃基板的冷却范围,改善光刻胶变性残留问题。 The relationship between the degeneration of the photoresist and the structure of the lower electrode was studied through the location of the degeneration of the photoresist on the glass substrate under different inductively coupled plasma etching conditions. The results show that the Dam zone of the lower electrode has poor cooling effect on the glass substrate, resulting in the degeneration of the photoresist on the glass substrate in the region. After the modification of the lower electrode Dam area, the cooling range of the glass substrate can be effectively increased, and the residual problem of the photoresist degeneration can be improved.