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通过建立沟道区域和埋氧区域的二维泊松方程,并考虑衬底区域的掺杂和背栅偏压对器件阈值电压的影响,得到了一种正背栅全耗尽SOI-MOSFET二维阈值电压模型。根据模型计算结果,研究了衬底掺杂浓度和衬底(背栅)偏压对器件阈值电压的影响,通过与MEDICI数值模拟结果的比较表明,该模型能预计不同衬底掺杂浓度和衬底(背栅)偏压对阈值电压的影响,正确反映器件的短沟效应和背栅效应。
By establishing the two-dimensional Poisson’s equation of the channel region and the buried oxide region, and taking into account the influence of the doping of the substrate region and the back-gate bias on the threshold voltage of the device, a fully back-gate fully depleted SOI-MOSFET II Dimensional threshold voltage model. According to the results of the model calculation, the influence of substrate doping concentration and substrate back-gate bias voltage on the device threshold voltage was studied. The comparison with the results of MEDICI numerical simulation shows that the model can predict different substrate doping concentration and liner Bottom (back gate) bias voltage threshold voltage, the correct reflection of the device short-groove effect and the back gate effect.